Vadim Lashkaryov

Vadim Evgenievich Lashkaryov (October 7, 1903 – December 1, 1974) was a Soviet experimental physicist. He was an academician of the National Academy of Sciences of Ukraine and is known for his fundamental contributions to physics of semiconductors.

Career Lashkaryov graduated from the Kyiv Institute for People Education (as the Kyiv University was termed at that time) in 1924. He started his research work on the diffraction of X-rays in the Kyiv Polytechnic Institute and continued it in the newly established Institute of Physics of the Ukrainian Academy of Sciences. In 1928 he moved to Physical-Technical Institute in Leningrad (currently Ioffe Institute in Saint Petersburg), where he performed first in the Soviet Union experiments on electron diffraction. After a forced stay in Arkhangelsk, where he taught physics in the local Medical Institute, Lashkaryov returned to Kyiv in 1939, where he switched to physics of semiconductors. In 1941 Lashkaryouv published his fundamental discovery, the presence of a semiconductor layer between the barrier layer and the adjacent electrode, and the opposite sign of charge carriers (electrons and holes) on both sides of a barrier layer in solar cells of Cu2O and silver sulphide photocells and selenium rectifiers. In current terms, this was a discovery of p–n junctions around the rectifying layers in these systems. This discovery was made by measuring the sign change of thermo-e.m.f. on both sides of the rectifying layer by using miniature thermoprobes. During World War II,…Citește mai mult

External links Page of the V. Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, http://isp.kiev.ua/ N. N. Bogolyubov, B. M. Vul, S. G. Kalashnikov, S. I. Pekar, É. I. Rashba, O. V. Snitko, K. B. Tolpygo and M. K. Sheinkman, Vadim Evgen'evich Lashkarev (obituary), Sov. Phys. Usp. 18, 842 (1975) doi:10.1070/PU1975v018n10ABEH005232, http://iopscience.iop.org/0038-5670/18/10/M07/